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AFT05MS003N 1 rf device data freescale semiconductor, inc. rf power ldmos transistor high ruggedness n--channel enhancement--mode lateral mosfet designed for handheld two--way radio applications with frequencies from 1.8 to 941 mhz. the high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment. wideband performance (7.5 vdc, t a =25 ? c, cw) frequency (mhz) p in (dbm) g ps (db) ? d (%) p out (w) 136?174 (1,4) 17.8 17.1 67.1 3.2 350?520 (2,4) 20.0 15.1 73.0 3.2 narrowband performance (7.5 vdc, t a =25 ? c, cw) frequency (mhz) g ps (db) ? d (%) p out (w) 520 (3) 20.8 68.3 3.0 load mismatch/ruggedness frequency (mhz) signal type vswr p in (dbm) test voltage result 520 (3) cw > 65:1 at all phase angles 21.1 9.0 no device degradation 1. measured in 136?174 mhz vhf broadband reference circuit. 2. measured in 350?520 mhz uhf broadband reference circuit. 3. measured in 520 mhz narrowband production test circuit. 4. the values shown are the center band performance numbers across the indicated frequency range. features ? characterized for operation from 1.8 to 941 mhz ? unmatched input and output allowing wide frequency range utilization ? integrated esd protection ? integrated stab ility enhancements ? wideband ? full power across the band ? exceptional thermal performance ? extreme ruggedness typical applications ? output stage vhf band handheld radio ? output stage uhf band handheld radio ? output stage for 700?900 mhz handheld radio ? smart metering ? driver for 1.8?941 mhz applications document number: AFT05MS003N rev. 0, 8/2015 freescale semiconductor technical data 1.8?941 mhz, 3 w, 7.5 v wideband airfast rf power ldmos transistor AFT05MS003N sot--89 figure 1. pin connections source gate source drain 2 23 1 ? freescale semiconductor, inc., 2015. all rights reserved.
2 rf device data freescale semiconductor, inc. AFT05MS003N table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +30 vdc gate--source voltage v gs ?6.0, +12 vdc operating voltage v dd 12.5, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature range (1,2) t j ?40 to +150 ? c total device dissipation @ t c =25 ? c derate above 25 ? c p d 30.5 0.24 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 79 ? c, 3 w cw, 7.5 vdc, i dq = 100 ma, 520 mhz r ? jc 4.1 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1c, passes 1000 v machine model (per eia/jesd22--a115) a, passes 100 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 1 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =30vdc,v gs =0vdc) i dss ? ? 2 ? adc zero gate voltage drain leakage current (v ds =7.5vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 500 nadc on characteristics gate threshold voltage (v ds =10vdc,i d =67 ? adc) v gs(th) 1.8 2.2 2.6 vdc drain--source on--voltage (v gs =10vdc,i d = 700 madc) v ds(on) ? 0.25 ? vdc forward transconductance (v ds =7.5vdc,i d =2.6adc) g fs ? 3.1 ? s dynamic characteristics reverse transfer capacitance (v ds =7.5vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 1.1 ? pf output capacitance (v ds =7.5vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 23.2 ? pf input capacitance (v ds =7.5vdc,v gs =0vdc ? 30 mv(rms)ac @ 1 mhz) c iss ? 38.5 ? pf 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http:// www.freescale.com/rf/calculators. 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf and search for an1955. (continued)
AFT05MS003N 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performance (in freescale narrowband production test fixture, 50 ohm system) v dd =7.5vdc,i dq = 100 ma, p in = 13.95 dbm, f = 520 mhz common--source amplifier output power p out ? 3.0 ? w drain efficiency ? d ? 68.3 ? % load mismatch/ruggedness (in freescale narrowband production test fixture, 50 ohm system) i dq = 100 ma frequency (mhz) signal type vswr p in (dbm) test voltage, v dd result 520 cw > 65:1 at all phase angles 21.1 9.0 no device degradation table 6. ordering information device tape and reel information package AFT05MS003Nt1 t1 suffix = 1,000 units, 12 mm tape width, 7--inch reel sot--89
4 rf device data freescale semiconductor, inc. AFT05MS003N typical characteristics 160 10 9 90 10 8 10 7 10 6 100 110 120 130 mttf (hours) 140 150 2 0.1 100 08 4 v ds , drain--source voltage (volts) figure 2. capacitance versus drain--source voltage c, capacitance (pf) 12 c iss 10 10 c oss measured with ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc c rss 6 1 t j , junction temperature ( ? c) figure 3. mttf versus junction temperature ? cw note: mttf value represents the total cumulative operating time under indicated test conditions. mttf calculator available at http:/www.freescale.com/rf/calculators. mttf (hours) v dd =50vdc i d = 0.476 amps 0.594 amps 0.714 amps
AFT05MS003N 5 rf device data freescale semiconductor, inc. 136?174 mhz vhf bro adband reference circuit table 7. 136?174 mhz vhf broadband performance (in freescale vhf broadband reference circuit, 50 ohm system) v dd =7.5volts,i dq =60ma,t a =25 ? c, cw frequency (mhz) p in (dbm) g ps (db) ? d (%) p out (w) 135 17.8 17.5 68.1 3.5 155 17.8 17.1 67.1 3.2 175 17.8 17.2 65.6 3.3 table 8. load mismatch/ruggedness (in freescale vhf broadband reference circuit) frequency (mhz) signal type vswr p in (dbm) test voltage, v dd result 155 cw > 65:1 at all phase angles 20.0 9.0 no device degradation
6 rf device data freescale semiconductor, inc. AFT05MS003N 136?174 mhz vhf broadband refe rence circuit ? 0.83 ?? 1.86 ? (2.1 cm ? 4.7 cm) d61839 c1 c2 l1 c5 c11 c13 j1 l4 l5 c8 l6 c9 c10 c12 r1 l2 c3 c4 c6 c7 c15 c14 c16 c17 c18 l3 c19 figure 4. AFT05MS003N vhf broadband refere nce circuit compone nt layout ? 136?174 mhz q1 AFT05MS003N rev. 0 (136 ? 174 mhz) table 9. AFT05MS003N vhf broadband reference cir cuit component designati ons and values ? 136?174 mhz part description part number manufacturer c1, c11 1500 pf chip capacitors c2012x7r2a152k085am tdk c2, c3, c4, c5, c8 56 pf chip capacitors gqm2195c2e560gb12d murata c6, c7 47 pf chip capacitors gqm2195c2e470gb12d murata c9 39 pf chip capacitor gqm2195c2e390gb12d murata c10 20 pf chip capacitor gqm2195c2e200gb12d murata c12, c13 10 ? f, 50 v electrolytic capacitors uvr1h100mdd nichicon c14, c19 1 ? f chip capacitors grm21br71h105ka12l murata c15, c18 1 nf chip capacitors c2012x7r2e102m tdk c16, c17 100 pf chip capacitors atc600f101jt250xt atc j1 right-angle breakaway headers (3 pins) 22-28-8360 molex l1 12.1 nh inductor 0908sq12n coilcraft l2 11.2 nh inductor 0807sq11n coilcraft l3, l4 25.0 nh inductors 0908sq25n coilcraft l5 17.0 nh inductor 0908sq17n coilcraft l6 23.0 nh inductor 0908sq23n coilcraft q1 rf power ldmos transistor AFT05MS003Nt1 freescale r1 100 ? , 1/4 w chip resistor crcw1206100rfkea vishay pcb 0.020 ? , ? r = 4.8, fr4 (s--1000) d61839 mtl
AFT05MS003N 7 rf device data freescale semiconductor, inc. typical characteristics ? 136?174 mhz vhf broadband reference circuit 125 g ps f, frequency (mhz) figure 5. power gain, drain efficiency and output power versus frequency at a constant p in 12 21 1 75 65 55 45 4 3 2 ? d , drain efficiency (%) ? d g ps , power gain (db) 19 17 13 165 35 p out ,output power (watts) v dd =7.5vdc p in = 17.8 dbm i dq =60ma p out 18 16 15 14 155 135 185 20 145 5 175 0 0 v gs , gate--source voltage (volts) figure 6. output power versus gate--source voltage 4 0.5 1.5 2 3 2.5 0.5 p out , output power (watts) f = 155 mhz, v dd =7.5vdc p in = 13.0 dbm 0 0 detail a 0.5 1.5 detail a p out , output power (watts) v gs , gate--source voltage (volts) 1.5 0.1 2.5 1 0.2 0.6 4 1 2 1 2.5 2 0.3 p in = 16.0 dbm 3 3.5 3.5 0.4 0.5 f = 155 mhz, v dd =7.5vdc p in = 13.0 dbm p in = 16.0 dbm 3 figure 7. power gain, drain efficiency and output power versus input power and frequency p in , input power (mw) g ps , power gain (db) 17 0110 g ps 4 0 2 19 21 20 60 80 10 p out v dd =7.5vdc i dq =60ma 15 155 mhz 155 mhz 175 mhz 135 mhz ? d 135 mhz p out ,output power (watts) 27 9 40 1 ? d , drain efficiency (%) 11 23 25 175 mhz 13 20 30 40 50 60 70 80 90 100 0 135 mhz 175 mhz 155 mhz
8 rf device data freescale semiconductor, inc. AFT05MS003N 136?174 mhz vhf bro adband reference circuit z o =25 ? z source z load f = 175 mhz f = 135 mhz f = 135 mhz f = 175 mhz f mhz z source ? z load ? 135 4.81 + j11.90 7.48 ? j3.90 140 5.82 + j13.00 7.70 ? j3.87 145 7.20 + j14.00 7.90 ? j3.96 150 9.40 + j14.99 8.12 ? j4.18 155 12.60 + j15.10 8.21 ? j4.53 160 16.80 + j13.17 8.17 ? j4.98 165 19.37 + j7.27 7.95 ? j5.45 170 16.05 + j0.81 7.56 ? j5.90 175 10.05 ? j0.70 7.03 ? j6.25 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 8. vhf broadband series equivalent source and load impedance ? 136?174 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
AFT05MS003N 9 rf device data freescale semiconductor, inc. 350?520 mhz uhf bro adband reference circuit table 10. 350?520 mhz uhf broadband performance (in freescale uhf broadband reference circuit, 50 ohm system) v dd =7.5volts,i dq =50ma,t a =25 ? c, cw frequency (mhz) p in (dbm) g ps (db) ? d (%) p out (w) 350 20.0 15.5 59.0 3.8 435 20.0 15.1 73.0 3.2 520 20.0 15.2 69.6 3.3 table 11. load mismatch/ruggedness (in freescale uhf broadband reference circuit) frequency (mhz) signal type vswr p in (dbm) test voltage, v dd result 435 cw > 65:1 at all phase angles 23.0 9.0 no device degradation
10 rf device data freescale semiconductor, inc. AFT05MS003N 350?520 mhz uhf broadband refe rence circuit ? 0.83 ?? 1.86 ? (2.1 cm ? 4.7 cm) d70894 c1 AFT05MS003N rev. 0 (350 ? 520 mhz) c2 l1 c3 l2 c4 r3 r2 r1 c5 c6 b1 j1 c7 b2 q1 l3 c8 c9 figure 9. AFT05MS003N uhf broadband refere nce circuit compone nt layout ? 350?520 mhz l6 c12 c11 l5 c10 l4 table 12. AFT05MS003N uhf broadba nd reference circuit component designations and values ? 350?520 mhz part description part number manufacturer b1, b2 rf beads 2743019447 fair-rite c1, c8, c12 100 pf chip capacitors atc100a101jt150xt atc c2 9.0 pf chip capacitor gqm2195c2e9r0bb12d murata c3 10 pf chip capacitor gqm2195c2e100fb12d murata c4, c9 39 pf chip capacitors gqm2195c2e390gb12d murata c5 100 pf chip capacitor gqm2195c2e101gb12d murata c6 1.0 ? f chip capacitor grm31cr72a105ka01l murata c7 10 ? f chip capacitor grm31cr61h106ka12l murata c10 15 pf chip capacitor gqm2195c2e150fb12d murata c11 3.9 pf chip capacitor gqm2195c2e3r9bb12d murata j1 right-angle breakaway headers (3 pins) 22-28-8360 molex l1 2.2 nh inductor l06032e2cgs avx l2, l5 6.8 nh inductors atc0805wl6r8 atc l3 19 nh inductor 0806sq19n coilcraft l4 5.6 nh inductor l08055r6cew avx l6 1.8 nh inductor l08051e8cgs avx q1 rf power ldmos transistor AFT05MS003Nt1 freescale r1, r2 22 ? , 1/10 w chip resistor rr1220q-220-d susumu r3 1.5 ?? 1/10 w chip resistor rc1206fr-071r5l yageo pcb 0.020 ? , ? r = 4.8, fr4 (s--1000) d70894 mtl
AFT05MS003N 11 rf device data freescale semiconductor, inc. typical characteristics ? 350?520 mhz uhf broadband reference circuit 350 g ps f, frequency (mhz) figure 10. power gain, drain efficiency and output power versus frequency at a constant p in 12 20 1 85 75 65 55 4 3 2 ? d , drain efficiency (%) ? d g ps , power gain (db) 19 17 13 410 430 45 p out ,output power (watts) v dd =7.5vdc p in = 20.0 dbm i dq =50ma p out 18 16 15 14 450 390 530 370 470 490 510 11 5 0 1 v gs , gate--source voltage (volts) figure 11. output power versus gate--source voltage 5 1.5 2 2.5 3 4.5 2.5 4 3 p out , output power (watts) f = 435 mhz, v dd =7.5vdc p in = 20.0 dbm 0 1 detail a 1.5 1.8 detail a p out , output power (watts) v gs , gate--source voltage (volts) 3.5 0.2 2.5 1.3 0.4 0.6 1 0.8 4 3.5 1.5 2 0.5 1 0.9 0.7 0.5 0.3 0.1 2 2.3 p in = 17.0 dbm f = 435 mhz, v dd =7.5vdc p in = 20.0 dbm p in = 17.0 dbm figure 12. power gain, drain efficiency and output power versus input power and frequency p in , input power (mw) g ps , power gain (db) 13 17 0 220 g ps 0 3 23 25 70 90 20 p out v dd =7.5vdc i dq =50ma 15 520 mhz 520 mhz ? d 435 mhz p out ,output power (watts) 27 11 7 50 30 4 2 ? d , drain efficiency (%) 19 21 435 mhz 1 5 10 435 mhz 350 mhz 350 mhz 9 40 60 80 100 120 140 160 180 200 350 mhz 520 mhz
12 rf device data freescale semiconductor, inc. AFT05MS003N 350?520 mhz uhf bro adband reference circuit z o =10 ? f = 520 mhz z source z load f = 350 mhz f = 350 mhz f = 520 mhz f mhz z source ? z load ? 350 6.90 + j6.70 4.89 + j4.10 360 7.22 + j6.96 4.95 + j4.48 370 7.60 + j7.15 5.04 + j4.83 380 7.94 + j7.62 5.15 + j5.14 390 8.34 + j7.66 5.28 + j5.42 400 8.65 + j7.61 5.44 + j5.65 410 8.97 + j7.37 5.58 + j5.82 420 9.08 + j7.06 5.73 + j5.90 430 8.91 + j6.73 5.86 + j5.95 440 8.63 + j6.34 5.94 + j5.90 450 8.14 + j6.04 5.95 + j5.81 460 7.49 + j5.89 5.87 + j5.66 470 6.77 + j5.95 5.68 + j5.51 480 6.05 + j6.21 5.39 + j5.39 490 5.38 + j6.64 5.03 + j5.33 500 4.80 + j7.20 4.60 + j5.35 510 4.30 + j7.86 4.16 + j5.47 520 3.94 + j8.57 3.68 + j5.71 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 13. uhf broadband series equivalent source and load impedance ? 350?520 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
AFT05MS003N 13 rf device data freescale semiconductor, inc. 520 mhz narrowband production test fixture ? 3 ?? 5 ? (7.62 cm ? 12.7 cm) figure 14. AFT05MS003N narrowband producti on test circuit component layout ? 520 mhz AFT05MS003N rev. 0 d74527 c1 c2 c3 c4 c5 c9 c10 c11 c12 c14 l2 l1 c16 b1 c6 c8 c7 c13 r1 r2 r3 r4 r5 c15 r6 table 13. AFT05MS003N narrowband production test circuit component designations and values ? 520 mhz part description part number manufacturer b1 short rf bead 2743019447 fair--rite c1 22 ? f, 35 v tantalum capacitor t491x226k035at kemet c2, c11 0.1 ? f chip capacitors cdr33bx104akws kemet c3, c10 0.01 ? f chip capacitors c0805c103k5rac kemet c4, c9 180 pf chip capacitors atc100b181jt300xt atc c5 68 pf chip capacitor atc100b680jt500xt atc c6, c7 18 pf chip capacitors atc100b180jt500xt atc c8 4.7 pf chip capacitor atc100b4r7jt500xt atc c12 330 ? f, 35 v electrolytic capacitor mcgpr35v337m10x16--rh multicomp c13 13 pf chip capacitor atc100b130jt500xt atc c14 16 pf chip capacitor atc100b160jt500xt atc c15 3.3 pf chip capacitor atc100b3r3jt500xt atc c16 6.8 pf chip capacitor atc100b6r8ct500xt atc l1 8 nh, 3 turn inductor a03tklc coilcraft l2 5 nh, 2 turn inductor a02tklc coilcraft r1, r2, r3, r4, r5, r6 3.9 ? , 1/4 w chip resistors rc1206fr--073r9l yageo pcb rogers ro4350, 0.030 ? , ? r =3.66 d74527 mtl
14 rf device data freescale semiconductor, inc. AFT05MS003N typical characteristics ? 520 mhz narrowband production test fixture p out , output power (watts) 0 123 2 1 3 p out , output power (watts) 4 1.5 2.5 4 5 p in = 14.0 dbm v gs , gate--source voltage (volts) figure 15. output power versus gate--source voltage figure 16. power gain, output power and drain efficiency versus input power p in , input power (mw) g ps , power gain (db) 0 6 3 0 ? d g ps 30 50 40 10 20 15 12 9 18 60 70 80 ? d , drain efficiency (%) p out v dd =7.5vdc,i dq = 100 ma f = 520 mhz p in =11.0dbm 21 24 40 80 160 90 v dd =7.5vdc,f=520mhz 3.5 120 f mhz z source ? z load ? 520 1.86 + j4.46 4.30 + j3.43 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 17. narrowband series equivalent source and load impedance ? 520 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
AFT05MS003N 15 rf device data freescale semiconductor, inc. figure 18. pcb pad layout for sot--89a 4.35 3.00 2x 45 ? 3x 0.70 2x 1.50 0.85 2x 1.25 1.90 figure 19. product marking aft503 awlywz
16 rf device data freescale semiconductor, inc. AFT05MS003N package dimensions pin 1. drain 2. gate 3. source
AFT05MS003N 17 rf device data freescale semiconductor, inc.
18 rf device data freescale semiconductor, inc. AFT05MS003N
AFT05MS003N 19 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .freescale.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 aug. 2015 ? initial release of data sheet
20 rf device data freescale semiconductor, inc. AFT05MS003N information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2015 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: AFT05MS003N rev. 0, 8/2015

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